MSRT10060(A)D
- Manufacturer
- GeneSiC Semiconductor
- Product Category
- Diodes - Rectifiers - Arrays
- Description
- DIODE GEN PURP 600V 100A 3 TOWER
- Manufacturer :
- GeneSiC Semiconductor
- Product Category :
- Diodes - Rectifiers - Arrays
- Current - Average Rectified (Io) (per Diode) :
- 100A
- Current - Reverse Leakage @ Vr :
- 10 µA @ 600 V
- Diode Configuration :
- 1 Pair Series Connection
- Diode Type :
- Standard
- Mounting Type :
- Chassis Mount
- Operating Temperature - Junction :
- -55°C ~ 150°C
- Package / Case :
- Three Tower
- Part Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Speed :
- Standard Recovery >500ns, > 200mA (Io)
- Supplier Device Package :
- Three Tower
- Voltage - DC Reverse (Vr) (Max) :
- 600 V
- Voltage - Forward (Vf) (Max) @ If :
- 1.1 V @ 100 A
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| Qty | Unit Price | price |
|---|---|---|
| 1 | 57.6988 | 57.6988 |
| 10 | 54.81386 | 548.1386 |
| 100 | 51.92892 | 5192.892 |
| 1000 | 51.351932 | 51351.932 |
| 10000 | 50.774944 | 507749.44 |
- Stock:
- 10,805
- Minimum Order:
- 1
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