FDD2512
- Manufacturer
- Rochester Electronics
- Product Category
- Transistors - FETs, MOSFETs - Single
- Description
- MOSFET N-CH 150V 6.7A TO252
- Manufacturer :
- Rochester Electronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 6.7A (Ta)
- Drain to Source Voltage (Vdss) :
- 150 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 11 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 344 pF @ 75 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Part Status :
- Obsolete
- Power Dissipation (Max) :
- 42W (Ta)
- Rds On (Max) @ Id, Vgs :
- 420mOhm @ 2.2A, 10V
- Supplier Device Package :
- TO-252, (D-Pak)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
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| Qty | Unit Price | price |
|---|---|---|
| 1 | 0.75 | 0.75 |
| 10 | 0.7125 | 7.125 |
| 100 | 0.675 | 67.5 |
| 1000 | 0.6675 | 667.5 |
| 10000 | 0.66 | 6600 |
- Stock:
- 42,710
- Minimum Order:
- 1
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